List of top Material Science and Technology Questions asked in CUET (PG)

Match List-I with List-II

List-I	Semiconductor Type	List-II	Fermi Level Position
A	\(p\)-type semiconductor	II	Fermi level near valence band
B	\(n\)-type semiconductor	III	Fermi level near conduction band
C	Intrinsic semiconductor	I	Fermi level near middle of band gap
D	Degenerate semiconductor	IV	Fermi level inside a band

Match List-I with List-II

List-I	Concept	List-II	Expression / Property
A	\(1D\) density of states	III	\(n(E)\propto E^{-1/2}\)
B	\(2D\) density of states	I	Constant
C	\(3D\) density of states	II	\(n(E)\propto E^{1/2}\)
D	Effective mass	IV	\(m^*=\dfrac{\hbar^2}{d^2E/dk^2}\)

Match List-I with List-II

List-I	Concept	List-II	Description
A	Hall effect	IV	Sign and density of charge carriers
B	Fermi-Dirac statistics	III	Free electron gas
C	Phonon	I	Quantum of lattice vibration
D	Work function	II	Energy required to remove electron from metal surface

Match List-I with List-II

List-I	Nanostructure	List-II	Dimension
A	Quantum dot	IV	\(0D\)
B	Quantum wire	I	\(1D\)
C	Quantum well	II	\(2D\)
D	Bulk material	III	\(3D\)

Match List-I with List-II.

List - I		List - II
A.	Vacancy Defect	I.	Equal number of cations and anions missing
B.	Interstitial Defect	II.	Ion leaves regular site and occupies interstitial site
C.	Schottky Defect	III.	Missing atom from lattice site
D.	Frenkel Defect	IV.	Extra atom at interstitial site

Match List-I with List-II.

List - I		List - II
A.	Diamagnetic Material	I.	Small positive susceptibility
B.	Paramagnetic Material	II.	Negative susceptibility
C.	Ferromagnetic Material	III.	Large positive susceptibility
D.	Antiferromagnetic Material	IV.	Opposite equal magnetic moments

Match List-I with List-II

List-I	Crystal Structure	List-II	Property
A	FCC	III	Packing fraction \(=0.74\)
B	BCC	II	Packing fraction \(=0.68\)
C	Simple cubic	I	Packing fraction \(=0.52\)
D	HCP	IV	Ideal \(c/a = 1.633\)

Match List-I with List-II.

List - I		List - II
A.	SEM	I.	Crystal structure
B.	TEM	II.	Optical absorption
C.	XRD	III.	Surface morphology
D.	UV-Visible Spectroscopy	IV.	Internal microstructure

Match List-I with List-II.

List - I		List - II
A.	Diode Laser	I.	Nitinol
B.	Liquid Crystal Display	II.	Quartz
C.	Piezoelectric Material	III.	Optical communication
D.	Shape Memory Alloy	IV.	Display device

Match List-I with List-II.

List - I		List - II
A.	Surface Defects	I.	Vacancy
B.	Point Defects	II.	Dislocation
C.	Volume Defects	III.	Grain Boundary
D.	Line Defects	IV.	Crack

Match List-I with List-II. List-I:
A. X-ray diffraction,
B. Hall effect,
C. Isothermal expansion,
D. Adiabatic process.

List-II:
I. \(\Delta U=0\) for ideal gas,
II. No heat exchange,
III. Bragg's law,
IV. Carrier concentration and sign.

Match List-I with List-II.

List - I		List - II
A.	Cohesive Energy	I.	Energy required to remove electron from atom
B.	Work Function	II.	Energy required to remove electron from metal surface
C.	Electron Affinity	III.	Energy released when electron is added
D.	Ionization Potential	IV.	Energy required to separate crystal into individual atoms

Match List-I with List-II.

List - I		List - II
A.	Sol-gel Method	I.	Top-down approach
B.	Ball Milling	II.	Thin film by rotation
C.	Chemical Vapour Deposition	III.	Bottom-up wet chemical method
D.	Spin Coating	IV.	Film growth from vapour phase

Match List-I with List-II.

List - I		List - II
A.	Graphene Oxide	I.	Bulk oxide semiconductor
B.	\[ \mathrm{MoS_2} \]	II.	Transition metal dichalcogenide
C.	hBN	III.	Graphene-based 2D material
D.	ZnO	IV.	Hexagonal boron nitride

Match List-I with List-II.

List - I		List - II
A.	Bragg's Law	I.	\[ \frac{K}{\sigma}=LT \]
B.	Dulong-Petit's Law	II.	\[ n\lambda=2d\sin\theta \]
C.	Wiedemann-Franz Law	III.	\[ C_V=3R \]
D.	Curie-Weiss Law	IV.	\[ \chi=\frac{C}{T-\theta} \]

For isothermal expansion of an ideal gas, which of the following statements are correct?
A. The change in internal energy is zero,
B. The work done is zero,
C. The heat is released by gas,
D. The heat is absorbed by gas.

Which of the following statements are correct at \(T=0\ \text{K}\)?
A. Fermi function is a step function,
B. Chemical potential is equal to Fermi energy,
C. Chemical potential is equal to half of Fermi energy.

Which of the following can be determined by Hall effect?
A. The electron specific heat at constant volume per electron,
B. The sign of the current carrying charges,
C. The temperature of a rectangular metal slab,
D. The charge density, E. The mobility of the charge carriers.

Which of the following statements are correct?
A. Defects in solids can affect the electrical property,
B. Defects in solids can affect the optical property,
C. Defects cannot be created by any technique,
D. Defects can be removed permanently with any technique.

Which of the following statements are correct for curves on \(T-S\) diagram?
A. The slope of an isochoric curve on \(T-S\) diagram is \(\frac{C_V}{T}\),
B. The slope of an isochoric curve on \(T-S\) diagram is \(\frac{T}{C_V}\),
C. The slope of an isobaric curve on \(T-S\) diagram is \(\frac{T}{C_P}\),
D. The slope of an isobaric curve on \(T-S\) diagram is \(C_P\), E. An isochoric curve has a greater slope than an isobaric curve on \(T-S\) diagram.

Arrange the following dispersion graphs in decreasing order of their corresponding density of states.

Which of the following are applications of nanomaterials?
A. Catalysts,
B. Polarizer,
C. Coatings for anticorrosion protection,
D. Fluorescent, E. Drug delivery.

Which of the following are applications of nanoparticles in biomedical field?
A. Non-destructive evaluation,
B. Diagnosis,
C. Antibody probes,
D. Aiding controlled drug delivery to infected cells, E. Catalysts.

Which of the following statement/s regarding polarization in materials is/are correct?
A. Piezoelectricity and pyroelectricity are inherent property of crystals.
B. The electric moment is inversely proportional to the electric fiel
D.
C. Above the Curie temperature, the dielectric constant is inversely proportional to \((T-T_c)\) in ferroelectrics.

Arrange the following thin film deposition techniques in increasing order of their deposition rate:
A. Pulse laser deposition,
B. rf Sputtering,
C. Thin film deposition by thermal evaporation,
D. Spin coating.

Prev
1
2
3
...
9
Next