Question

Match List-I with List-II.

List - I		List - II
A.	Graphene Oxide	I.	Bulk oxide semiconductor
B.	\[ \mathrm{MoS_2} \]	II.	Transition metal dichalcogenide
C.	hBN	III.	Graphene-based 2D material
D.	ZnO	IV.	Hexagonal boron nitride

• A. A-III, B-II, C-IV, D-I
• B. A-I, B-II, C-III, D-IV
• C. A-II, B-III, C-IV, D-I
• D. A-IV, B-I, C-II, D-III

Hint:

Graphene oxide, \(\text{MoS}_2\), and hBN are common layered or 2D material examples; ZnO is generally treated as a bulk oxide semiconductor.

Answer 1

The Correct Option is A

Concept:
This question is based on examples and categories of modern materials and two-dimensional materials.

Step 1: Graphene oxide.
Graphene oxide is a graphene-based two-dimensional material containing oxygen functional groups. \[ A\rightarrow III \]

Step 2: \(\text{MoS}_2\).
Molybdenum disulfide is a transition metal dichalcogenide and is commonly studied as a two-dimensional layered material. \[ B\rightarrow II \]

Step 3: hBN.
hBN stands for hexagonal boron nitride. \[ C\rightarrow IV \]

Step 4: ZnO.
ZnO is zinc oxide and is generally treated as a bulk oxide semiconductor in this context. \[ D\rightarrow I \] Therefore: \[ A-III,\ B-II,\ C-IV,\ D-I \] \[ \therefore \text{Correct Answer is (A)} \]