Given below are two statements : one is labelled as Assertion (A) and the other is labelled as Reason (R).
Assertion (A): The gate of a MOSFET is insulated from body of FET by deposition of a very thin fragile layer of \(SiO_2\) over the substrate.
Reason (R): The device is therefore called an insulated gate field-effect transistor (IGFET).
In the light of the above statements, choose the most appropriate answer from the options given below :