Concept:
When a PN junction diode is forward biased:
• The applied external voltage opposes the built-in barrier potential.
• The depletion width decreases.
• Majority carriers gain sufficient energy to cross the junction.
• Carrier diffusion takes place.
• Recombination occurs in neutral regions.
• Finally, substantial forward current flows through the diode.
The physical events occur in a logical chain and understanding their exact order is important for semiconductor device physics.
Step 1: Analyze the first event occurring under forward bias.
When forward bias is applied:
• Positive terminal is connected to p-side.
• Negative terminal is connected to n-side.
The applied voltage opposes the internal electric field.
As a result:
\[
\text{Barrier potential reduces}
\]
Therefore:
\[
A
\]
is the first event.
Step 2: Determine the next physical process.
Because the barrier potential decreases:
• Majority carriers can now cross the junction more easily.
• Holes move from p-region to n-region.
• Electrons move from n-region to p-region.
Thus:
\[
\text{Majority carriers injected across junction}
\]
Hence:
\[
B
\]
comes next.
Step 3: Establishment of diffusion current.
Once carriers are injected:
• Concentration gradients are created.
• Carrier diffusion begins across quasi-neutral regions.
This produces diffusion current.
Therefore:
\[
D
\]
comes after carrier injection.
Step 4: Recombination process in neutral regions.
Injected carriers entering opposite regions are minority carriers there.
These minority carriers recombine with majority carriers in neutral regions.
Thus:
\[
C
\]
occurs after diffusion.
Step 5: Final increase in net forward current.
Due to all previous processes:
• Carrier transport becomes significant.
• Current through the junction rises rapidly.
Hence:
\[
E
\]
is the final consequence.
Step 6: Determine the complete sequence.
Therefore, the correct order is:
\[
A \rightarrow B \rightarrow D \rightarrow C \rightarrow E
\]
Hence, the correct option is:
\[
\boxed{(B)\ A,B,D,C,E}
\]