Concept:
The body effect (also called substrate bias effect) in MOSFETs refers to the variation of threshold voltage due to the potential difference between source and body.
The threshold voltage expression is:
\[
V_{th}=V_{th0}+\gamma\left(\sqrt{2\phi_F+V_{SB}}-\sqrt{2\phi_F}\right)
\]
where:
• \(V_{th0}\) = threshold voltage when \(V_{SB}=0\)
• \(\gamma\) = body effect coefficient
• \(\phi_F\) = Fermi potential
• \(V_{SB}\) = source-to-body voltage
From this equation, it is clear that:
\[
V_{th}\uparrow \quad \text{as} \quad V_{SB}\uparrow
\]
The increase occurs because larger reverse bias between source and body widens the depletion region, making inversion more difficult.
Step 1: Analyze Assertion (A).
Assertion states:
The body effect causes threshold voltage to increase as \(V_{SB}\) increases.
From the threshold-voltage equation:
\[
V_{th}=V_{th0}+\gamma\left(\sqrt{2\phi_F+V_{SB}}-\sqrt{2\phi_F}\right)
\]
we observe that:
\[
V_{th}\propto \sqrt{2\phi_F+V_{SB}}
\]
Therefore, when:
\[
V_{SB}\uparrow
\]
the threshold voltage also increases.
Hence, Assertion (A) is correct.
Step 2: Analyze Reason (R).
Reason states:
Increasing \(V_{SB}\) resets the surface potential and reduces the barrier for inversion.
This statement is incorrect.
Actually:
• Increasing \(V_{SB}\) increases reverse bias between source and substrate.
• The depletion region width increases.
• More gate voltage is required to create inversion.
• Thus, the barrier for inversion increases rather than decreases.
Therefore, Reason (R) is false.
Step 3: Determine the correct relationship between Assertion and Reason.
We conclude:
• Assertion (A) is correct.
• Reason (R) is incorrect.
Hence, the correct choice is:
\[
\boxed{(C)\ (A)\text{ is correct but }(R)\text{ is not correct}}
\]