List of top Nanoelectronics Questions asked in CUET (PG)

What are the primary components of a lipid raft in the context of bio-nanoelectronics?
Which property refers to the inability to repeat recorded data when scanning from different directions?
In optical fibers, does the core or the cladding have a higher refractive index?
What is the word length of a standard 8085 microprocessor?
Which scientist is widely regarded as the Father of Nanotechnology?
For an ideal op-amp, what is the output voltage if the feedback resistance is equal to the input resistance in an inverting configuration?
Which type of counter requires 5 flip-flops to implement a MOD-31 operation?
In a BJT, what is the primary consequence of the Early effect on the effective base width?
What happens to the optical absorption spectrum of a nanoparticle as its size is reduced?
Which device is a three-dimensional gate structure designed to reduce short-channel effects in nanoscale MOSFETs?
What is the standard wavelength used in Extreme Ultraviolet (EUV) lithography?
In quantum mechanics, what is the degree of confinement for a Quantum Dot?
What is the typical characteristic length scale range for nanomaterials?
How does the band gap of a semiconducting chiral carbon nanotube change as its diameter increases?
Which allotrope of carbon is considered a one-dimensional (1D) nanostructure?
The number of flip-flops required to implement a MOD-31 counter are:
The DC collector current for a BJT with $\alpha = 0.99$, $I_B = 25 \, \mu A$ and $I_{CBO} = 200 \, nA$ is:
(A) Tunnel diode is a heavily doped pn junction diode that exhibits negative differential resistance.
(B) Stability factor (S) is the maximum for a voltage divider bias circuit.
(C) The operational amplifier works as a comparator circuit in open loop configuration.
(D) Biasing is done to set the quiescent point of the transistor in the middle of the DC load line.
Choose the correct statements from the options given below:
Arrange the following devices in increasing order of their input resistances:
(A) MOSFET
(B) BJT
(C) JFET
(D) PN junction diode

Match List-I with List-II:

List-I (Effects)List-II (Electronic Devices)
(A) Channel length modulation(I) Zener diode
(B) Channel width modulation(II) BJTs
(C) Early effect(III) JFETs
(D) Tunneling effect(IV) MOSFETs

Choose the correct answer:

Following statements are given in reference to 8085 Microprocessor:
(A) Its memory size is 64 KB
(B) It is a 40-pin IC
(C) Its clock frequency lies between 3 to 5 MHz
(D) It has 16 bit of each data and address lines.
Choose the correct answer from the options given below:

Match List-I with List-II

List-I (Instructions)List-II (Addressing Mode)
(A) LDA 2100 H(I) Immediate 
(B) RAL(II) Register
(C) ADD C(III) Direct
(D) ANI 08 H (IV) Implied
(A) MOV A, C is a one-byte instruction.
(B) OUT 03 H is a two-byte instruction.
(C) ANI 76 H is a three-byte instruction.
(D) STA 3000 H is a three-byte instruction.

Match List-I with List-II

List-I (Data Bus Status Output)List-II (Status Signals)
(A) Memory read  (I) 0, 1, 1
(B) Op-code fetch(II) 0, 1, 0
(C) INTR acknowledge(III) 0, 0, 1
(D) Memory write(IV) 1, 1, 1
............ refers to the inability to faithfully repeat recorded data output when measuring a range of values and scanning from different directions.