Question

Which device is a three-dimensional gate structure designed to reduce short-channel effects in nanoscale MOSFETs?

• A. Bipolar Junction Transistor (BJT)
• B. FinFET
• C. Diode
• D. Capacitor

Hint:

3D gate transistor used in modern chips → {FinFET}

Answer 1

The Correct Option is B

Concept:
As MOSFET devices shrink to nanoscale dimensions, they suffer from short-channel effects, where the gate loses control over the channel current. This leads to leakage currents and reduced device performance.
Step 1:Understanding FinFET structure.
A FinFET (Fin Field-Effect Transistor) is a three-dimensional transistor structure where the conducting channel is shaped like a vertical fin.
Step 2:Gate control improvement.
The gate wraps around the fin on multiple sides, providing better electrostatic control over the channel compared to traditional planar MOSFETs.
Step 3:Benefits of FinFET technology.}

• Reduced short-channel effects
• Lower leakage current
• Higher switching speed
• Improved energy efficiency

Conclusion:
Therefore, the device that uses a three-dimensional gate structure to reduce short-channel effects in nanoscale MOSFETs is the FinFET.