The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

The dynamic resistance of a diode is defined as the rate of change of voltage with respect to the current. It is given by: \[ r_d = \frac{\Delta V}{\Delta I} \] From the graph, at \( V = -0.6 \) V, we can estimate the current \( I \) and the change in voltage \( \Delta V \) and current \( \Delta I \) near this point. For instance, if the current is approximately 20 mA at \( V = -0.6 \) V and the slope of the curve near this voltage is estimated, we can calculate \( r_d \). For example, if the current changes by 10 mA for a voltage change of 0.2 V, the dynamic resistance is: \[ r_d = \frac{0.2 \, \text{V}}{10 \, \text{mA}} = 20 \, \Omega \] Thus, the dynamic resistance at \( V = -0.6 \) V is approximately 20 \( \Omega \).
In an n-type silicon, which of the following statement is true:
Which of the statement is true for p-type semiconductors.
Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to \((E_g)_C, (E_g)_{Si}\) and \((E_g)_{Ge}\). Which of the following statements is true?
For a CE-transistor amplifier, the audio signal voltage across the collected resistance of 2 kΩ is 2 V. Suppose the current amplification factor of the transistor is 100, find the input signal voltage and base current, if the base resistance is 1 kΩ.