The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

The dynamic resistance of a diode is defined as the rate of change of voltage with respect to the current. It is given by: \[ r_d = \frac{\Delta V}{\Delta I} \] From the graph, at \( V = -0.6 \) V, we can estimate the current \( I \) and the change in voltage \( \Delta V \) and current \( \Delta I \) near this point. For instance, if the current is approximately 20 mA at \( V = -0.6 \) V and the slope of the curve near this voltage is estimated, we can calculate \( r_d \). For example, if the current changes by 10 mA for a voltage change of 0.2 V, the dynamic resistance is: \[ r_d = \frac{0.2 \, \text{V}}{10 \, \text{mA}} = 20 \, \Omega \] Thus, the dynamic resistance at \( V = -0.6 \) V is approximately 20 \( \Omega \).
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 
A racing track is built around an elliptical ground whose equation is given by \[ 9x^2 + 16y^2 = 144 \] The width of the track is \(3\) m as shown. Based on the given information answer the following: 
(i) Express \(y\) as a function of \(x\) from the given equation of ellipse.
(ii) Integrate the function obtained in (i) with respect to \(x\).
(iii)(a) Find the area of the region enclosed within the elliptical ground excluding the track using integration.
OR
(iii)(b) Write the coordinates of the points \(P\) and \(Q\) where the outer edge of the track cuts \(x\)-axis and \(y\)-axis in first quadrant and find the area of triangle formed by points \(P,O,Q\).