Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to \((E_g)_C, (E_g)_{Si}\) and \((E_g)_{Ge}\). Which of the following statements is true?
\((E_g)_{Si} < (E_g)_{Ge} < (E_g)_C\)
\((E_g)_C < (E_g)_{Ge} > (E_g)_{Si}\)
\((E_g)_C > (E_g)_{Si} > (E_g)_{Ge}\)
\((E_g)_C = (E_g)_{Si} = (E_g)_{Ge}\)
For given three elements, he energy band gap of carbon is the maximum and that of germanium is the least. The energy band gap of these elements are related as:\( (E_g)_C > (E_g)_{Si} > (E_g)_{Ge}\)
Therefore, the correct statement is (c).
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 
A racing track is built around an elliptical ground whose equation is given by \[ 9x^2 + 16y^2 = 144 \] The width of the track is \(3\) m as shown. Based on the given information answer the following: 
(i) Express \(y\) as a function of \(x\) from the given equation of ellipse.
(ii) Integrate the function obtained in (i) with respect to \(x\).
(iii)(a) Find the area of the region enclosed within the elliptical ground excluding the track using integration.
OR
(iii)(b) Write the coordinates of the points \(P\) and \(Q\) where the outer edge of the track cuts \(x\)-axis and \(y\)-axis in first quadrant and find the area of triangle formed by points \(P,O,Q\).
Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.