
- Circuit Arrangement for Studying V-I Characteristics of a p-n Junction Diode: The circuit consists of a power supply connected in series with the p-n junction diode and a variable resistor. A voltmeter is connected across the diode to measure the voltage, and an ammeter is connected in series to measure the current.
- Shape of the Characteristics of a Diode: The V-I characteristics of a diode show a sharp increase in current once the forward voltage exceeds a certain threshold (approximately 0.7V for silicon). In reverse bias, the current remains very small until breakdown occurs at a high reverse voltage.
- Two Information from the Characteristics: 1. The threshold voltage (or cut-off voltage) at which the diode starts to conduct in the forward direction. 2. The reverse saturation current, which is the small current that flows when the diode is reverse biased and no significant conduction occurs. Thus, the V-I characteristics provide information about the diode's forward threshold and its behavior under reverse bias.
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 
A racing track is built around an elliptical ground whose equation is given by \[ 9x^2 + 16y^2 = 144 \] The width of the track is \(3\) m as shown. Based on the given information answer the following: 
(i) Express \(y\) as a function of \(x\) from the given equation of ellipse.
(ii) Integrate the function obtained in (i) with respect to \(x\).
(iii)(a) Find the area of the region enclosed within the elliptical ground excluding the track using integration.
OR
(iii)(b) Write the coordinates of the points \(P\) and \(Q\) where the outer edge of the track cuts \(x\)-axis and \(y\)-axis in first quadrant and find the area of triangle formed by points \(P,O,Q\).