Assertion : In a semiconductor diode, the thickness of the depletion layer is not fixed.
Reason (R): Thickness of depletion layer in a semiconductor device depends upon many factors such as biasing of the semiconductor.
In a semiconductor diode, the depletion layer is a region where mobile charge carriers are absent due to the recombination of electrons and holes. This layer forms at the junction between the p-type and n-type materials. The thickness of this depletion layer is not constant and varies depending on several factors.
Explanation:
The assertion states that in a semiconductor diode, the depletion layer's thickness is not fixed. This is true. The thickness of the depletion layer can change due to the biasing of the semiconductor. Biasing refers to applying voltage across the diode:
The reason given is that the thickness depends on various factors, such as biasing. This is true and explains the assertion since biasing directly affects how the depletion region forms and changes.
Therefore, the correct choice is: If both Assertion and Reason (R) are true and Reason (R) is the correct explanation of Assertion.
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 
A racing track is built around an elliptical ground whose equation is given by \[ 9x^2 + 16y^2 = 144 \] The width of the track is \(3\) m as shown. Based on the given information answer the following: 
(i) Express \(y\) as a function of \(x\) from the given equation of ellipse.
(ii) Integrate the function obtained in (i) with respect to \(x\).
(iii)(a) Find the area of the region enclosed within the elliptical ground excluding the track using integration.
OR
(iii)(b) Write the coordinates of the points \(P\) and \(Q\) where the outer edge of the track cuts \(x\)-axis and \(y\)-axis in first quadrant and find the area of triangle formed by points \(P,O,Q\).