A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?
Energy band gap of the given photodiode, Eg = 2.8 eV
Wavelength, λ = 6000 nm =\( 6000 × 10^{−9} m \)
The energy of a signal is given by the relation:
\(E = \frac{hc}{λ}\)
Where,
h = Planck’s constant = \(6.626 × 10^{−34} Js \)
c = Speed of light = \(3 × 10^{8} \frac{m}{s}\)
\(E =\frac{ 6.626\times10^{-34}\times3\times10^{8}}{6000\times 10^{-9}}\)
\(E = 3.313 × 10^{−20} J\)
But \(1.6 × 10^{−19} J = 1 eV\)
E = \(3.313 × 10^{−20} J\)
E = \(\frac{3.313 × 10^{−20}}{1.6\times10^{-19}} eV\)
E = 0.207 eV
The energy of a signal of wavelength 6000 nm is 0.207 eV, which is less than 2.8 eV−the energy band gap of a photodiode.
Hence, the photodiode cannot detect the signal.
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 
A racing track is built around an elliptical ground whose equation is given by \[ 9x^2 + 16y^2 = 144 \] The width of the track is \(3\) m as shown. Based on the given information answer the following: 
(i) Express \(y\) as a function of \(x\) from the given equation of ellipse.
(ii) Integrate the function obtained in (i) with respect to \(x\).
(iii)(a) Find the area of the region enclosed within the elliptical ground excluding the track using integration.
OR
(iii)(b) Write the coordinates of the points \(P\) and \(Q\) where the outer edge of the track cuts \(x\)-axis and \(y\)-axis in first quadrant and find the area of triangle formed by points \(P,O,Q\).
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
in p-n junction diode two operating regions are there:
There are three biasing conditions for p-n junction diode are as follows: