List of top Nano Technology Questions asked in TS PGECET

A uniform cylinder of radius 10 cm and mass 20 kg is mounted so as to rotate freely about a horizontal axis that is parallel to and 5.0 cm from the central longitudinal axis of the cylinder. What is the rotational inertia of the cylinder about the axis of rotation?

The following are the centroidal coordinates of semicircular plane of \(16\pi\) cm diameter and is symmetric about \(x\)-axis.

Harmonic oscillator potential is:

The Born's approximation is applicable for:

Which of the following has the highest specific heat capacity?

A ball of mass 0.1 kg, initially at rest, is dropped from height of 1 m. Ball hits the ground and bounces off the ground. Upon impact with the ground, the velocity reduces by 20%. The height (in m) to which the ball will rise is:

The polar moment of inertia of a circular plane of diameter about its centroid is (in \(\text{cm}^4\)):

Particles with integer spin are called:

The energy levels of a quantum harmonic oscillator are:

The wavefunction of a system of identical fermions must be:

The time-independent Schrödinger equation is fundamentally an eigenvalue equation for which operator?

The ground state energy of the Hydrogen atom is approximately:

The second-order correction to the energy of the ground state is always:

The Schrödinger equation is:

CMOS inverter output is LOW when input is:

A counter with modulus 8 has:

Digital signals for FFT are assumed:

MOSFET cutoff occurs when:

The de Broglie wavelength of a particle is:

A 4-bit ripple counter uses flip-flops with a propagation delay of 50 ns each. The maximum clock frequency that can be used is:

D/A converter resolution improves with:

A practical op-amp differentiator requires a small resistor in series with the input capacitor to:

A 10-bit ADC has a reference voltage of 10.24 V. The resolution (step size) of the converter is:

"Latch-up" in CMOS circuits is caused by the formation of parasitic:

In a MOSFET, if the source-to-body voltage \( V_{SB} > 0 \) (for NMOS), the threshold voltage \( V_T \):