Concept:
A semiconductor p-n junction diode displays a non-linear voltage-current relationship. Because its $I$-$V$ characteristic curve is non-linear, its resistance is not constant. Instead, we calculate its dynamic resistance (also called AC or forward bias resistance, \(r_d\)).
Dynamic resistance is defined as the ratio of a small change in voltage across the diode (\(\Delta V\)) to the resulting change in current through it (\(\Delta I\)):
\[
r_d = \frac{\Delta V}{\Delta I}
\]
Step 1: Computing the change in forward bias voltage (\(\Delta V\)).
The forward bias voltage is modified across two specific operating conditions:
• Initial voltage, \(V_1 = 0.8\text{ V}\)
• Final voltage, \(V_2 = 1.0\text{ V}\)
The net change in voltage is:
\[
\Delta V = V_2 - V_1 = 1.0\text{ V} - 0.8\text{ V} = 0.2\text{ V}
\]
Step 2: Converting current to standard SI units and computing (\(\Delta I\)).
The question states that the change in forward current is:
\[
\Delta I = 2.0\text{ mA}
\]
To perform accurate calculations, we convert milliamperes (mA) into the standard SI unit of Amperes (A):
\[
\Delta I = 2.0 \times 10^{-3}\text{ A} = 0.002\text{ A}
\]
Step 3: Calculating the forward dynamic resistance.
Using the dynamic resistance formula:
\[
r_d = \frac{\Delta V}{\Delta I}
\]
Substitute the calculated values:
\[
r_d = \frac{0.2\text{ V}}{2.0 \times 10^{-3}\text{ A}}
\]
To simplify, move the power of ten from the denominator to the numerator:
\[
r_d = \frac{0.2}{2.0} \times 10^3 = 0.1 \times 1000 = 100\text{ }\Omega
\]
The forward bias resistance of the diode is \(100\text{ }\Omega\), matching Option (C).