Question:
The potential barrier in p-n junction diode is due to
The potential barrier in p-n junction diode is due to
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Think of the fixed donor and acceptor ions left uncovered on the two sides of the junction after diffusion and recombination.
Updated On: Nov 12, 2026
- depletion of positive charges near the junction.
- accumulation of positive charges near the junction.
- depletion of negative charges near the junction.
- accumulation of positive and negative charges near the junction.
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The Correct Option is D
Solution and Explanation
Step 1: Understanding the Concept
When a p-n junction forms, electrons diffuse from the n-side to the p-side and holes diffuse the other way. They recombine near the junction.
Step 2: Charges left behind
This leaves fixed positive donor ions on the n-side and fixed negative acceptor ions on the p-side, forming the depletion layer.
Step 3: Result
These two layers of fixed charge create an electric field across the junction. This field opposes further diffusion and acts as the potential barrier.
Final Answer:
The barrier is due to accumulation of positive and negative charges near the junction, which is option (D). \[ \boxed{\text{(D) }\text{accumulation of positive and negative charges near the junction}} \]
When a p-n junction forms, electrons diffuse from the n-side to the p-side and holes diffuse the other way. They recombine near the junction.
Step 2: Charges left behind
This leaves fixed positive donor ions on the n-side and fixed negative acceptor ions on the p-side, forming the depletion layer.
Step 3: Result
These two layers of fixed charge create an electric field across the junction. This field opposes further diffusion and acts as the potential barrier.
Final Answer:
The barrier is due to accumulation of positive and negative charges near the junction, which is option (D). \[ \boxed{\text{(D) }\text{accumulation of positive and negative charges near the junction}} \]
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