The ratio of dopant atoms to silicon atoms is given as: \[ \frac{\text{Number of dopant atoms}}{\text{Number of silicon atoms}} = \frac{1}{5 \times 10^7} \]
The number density of silicon atoms is \( 5 \times 10^{28} \) atoms/m\(^3\). The number of dopant atoms per cubic metre is: \[ \text{Number of dopant atoms} = \frac{1}{5 \times 10^7} \times 5 \times 10^{28} = 10^{21} \, \text{dopant atoms/m}^3 \]
Since each dopant atom creates one hole in the semiconductor, the number of holes created per cubic metre is equal to the number of dopant atoms: \[ \text{Number of holes} = 10^{21} \, \text{holes/m}^3 \]
Since \( 1 \, \text{m}^3 = 10^6 \, \text{cm}^3 \), the number of holes per cubic centimetre is: \[ \text{Number of holes} = \frac{10^{21}}{10^6} = 10^{15} \, \text{holes/cm}^3 \]
One example of a dopant used in p-type silicon is **boron (B)**. Boron atoms have one fewer valence electron than silicon, creating a hole in the crystal lattice when substituted for a silicon atom.
The number of holes created per cubic centimetre in the specimen due to doping is \( \boxed{10^{15}} \, \text{holes/cm}^3 \).
A racing track is built around an elliptical ground whose equation is given by \[ 9x^2 + 16y^2 = 144 \] The width of the track is \(3\) m as shown. Based on the given information answer the following: 
(i) Express \(y\) as a function of \(x\) from the given equation of ellipse.
(ii) Integrate the function obtained in (i) with respect to \(x\).
(iii)(a) Find the area of the region enclosed within the elliptical ground excluding the track using integration.
OR
(iii)(b) Write the coordinates of the points \(P\) and \(Q\) where the outer edge of the track cuts \(x\)-axis and \(y\)-axis in first quadrant and find the area of triangle formed by points \(P,O,Q\).