Two parallel plate capacitors X and Y are connected in series to a $6\,\text{V}$ battery. They have the same plate area and same plate separation but capacitor X has air between its plates, whereas capacitor Y contains a material of dielectric constant $4$.
(a) Calculate the capacitances of X and Y, if the equivalent capacitance of the combination of X and Y is $4\,\mu\text{F}$.
(b) Calculate the potential difference across the plates of X and Y.
Extrinsic semiconductors are made by doping pure or intrinsic semiconductors with suitable impurity. There are two types of dopants used in doping, Si or Ge, and using them p-type and n-type semiconductors can be obtained. A p-n junction is the basic building block of many semiconductor devices. Two important processes occur during the formation of a p-n junction: diffusion and drift. When such a junction is formed, a ’depletion layer’ is created consisting of immobile ion-cores. This is responsible for a junction potential barrier. The width of a depletion layer and the height of potential barrier changes when a junction is forward-biased or reverse-biased. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for application of an external voltage. Using diodes, alternating voltages can be rectified.