
The V-I characteristics of a diode can be divided into two distinct regions:
In the forward bias region, the p-side of the diode is connected to the positive terminal of the battery, and the n-side is connected to the negative terminal. In this region, the current increases exponentially as the voltage increases. Initially, there is very little current, but once the threshold voltage (typically around 0.7 V for silicon diodes) is reached, the current rises sharply.
In the reverse bias region, the current remains very small (almost zero) until the reverse breakdown voltage is reached. After that, the current increases drastically in the reverse direction. This reverse breakdown occurs when the voltage exceeds a critical value, causing the diode to conduct in reverse.
A diode is connected in parallel with a resistance as shown in the figure. The most probable current (I)–voltage (V) characteristic is 

A racing track is built around an elliptical ground whose equation is given by \[ 9x^2 + 16y^2 = 144 \] The width of the track is \(3\) m as shown. Based on the given information answer the following: 
(i) Express \(y\) as a function of \(x\) from the given equation of ellipse.
(ii) Integrate the function obtained in (i) with respect to \(x\).
(iii)(a) Find the area of the region enclosed within the elliptical ground excluding the track using integration.
OR
(iii)(b) Write the coordinates of the points \(P\) and \(Q\) where the outer edge of the track cuts \(x\)-axis and \(y\)-axis in first quadrant and find the area of triangle formed by points \(P,O,Q\).