A p-type or n-type semiconductor can be converted into a p-n junction by doping it with suitable impurity. The motion of majority charge carriers causes diffusion current across the junction while the barrier electric field causes motion of minority carriers for drift current. In case of unbiased diode, the diffusion and drift currents are equal. This equilibrium is disturbed by the biasing batteries. Diodes, therefore, allow currents in one direction. This property of diode is used in making rectifiers.
In an experiment with convex lens of focal length f, the screen is fixed at a distance D from the object. A student slowly moves the lens away from the object towards the screen and finds that she is able to form sharp image of the object for two positions of the lens. The distance between these two positions of the lens is d.