Question:

A semiconductor X is made by doping a germanium crystal with indium \((Z = 49)\). A second semiconductor Y is made by doping germanium crystal with arsenic \((Z = 33)\). Both are joined end to end and connected to a battery as shown. Which of the following statements is correct?

Show Hint

Current gain is the ratio of collector to base current change, and voltage gain is beta times load over input resistance.
Updated On: Oct 1, 2026
  • X is p-type, Y is n-type and the junction is forward biased.
  • X is p-type, Y is n-type and the junction is reverse biased.
  • X is n-type, Y is p-type and the junction is forward biased.
  • X is n-type, Y is p-type and the junction is reverse biased.
Show Solution
collegedunia
Verified By Collegedunia

The Correct Option is A

Solution and Explanation

Step 1: Current gain:
\(\beta = \frac{\Delta I_C}{\Delta I_B} = \frac{5\text{ mA}}{0.2\text{ mA}} = 25\).

Step 2: Voltage gain:
\[ A_v = \beta\frac{R_L}{R_i} \Rightarrow 75 = 25\times\frac{R_L}{2\text{ k}\Omega} \]

Step 3: Solve:
\[ R_L = \frac{75\times2}{25} = 6\text{ k}\Omega \]

Final Answer:
The load resistance is 6 k\(\Omega\), option (D). \[ \boxed{6\text{ k}\Omega} \]
Was this answer helpful?
0
0