In a p-type silicon semiconductor, doping introduces **holes** (positive charge carriers) by substituting silicon atoms with dopant atoms. Let's calculate the number of holes created per cubic centimetre due to doping.
The number of dopant atoms per unit volume can be calculated by multiplying the doping concentration by the number density of silicon atoms:
\[ \text{Number of dopant atoms per unit volume} = \frac{1}{5 \times 10^7} \times 5 \times 10^{28} \, \text{atoms/m}^3 \]
Thus, the number of dopant atoms per unit volume is:
\[ = 1 \times 10^{21} \, \text{atoms/m}^3 \]
In a p-type semiconductor, each dopant atom introduces one hole. Therefore, the number of holes per cubic metre is equal to the number of dopant atoms per cubic metre:
\[ \text{Number of holes per cubic metre} = 1 \times 10^{21} \, \text{holes/m}^3 \]
Since 1 cubic metre is equal to \( 10^6 \) cubic centimetres, the number of holes per cubic centimetre is:
\[ \text{Number of holes per cubic centimetre} = \frac{1 \times 10^{21}}{10^6} = 1 \times 10^{15} \, \text{holes/cm}^3 \]
The number of holes created per cubic centimetre in the p-type silicon semiconductor due to doping is \( 1 \times 10^{15} \, \text{holes/cm}^3 \).
One common example of a dopant for creating p-type silicon is boron (B). Boron has one less valence electron than silicon, which results in the creation of a hole in the semiconductor.
Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).