The contribution to the total current in a semiconductor, due to electrons and holes are \(0.75\) and \(0.25\) respectively. The drift velocity of electrons is \(\dfrac{3}{2}\) times that of holes at this temperature. Then the ratio between electron concentration and hole concentration is
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In semiconductors:
\[
I \propto nqv
\]
So compare current contributions by comparing concentration and drift velocity together.
Current due to electrons:
\[
I_e \propto n v_e
\]
Current due to holes:
\[
I_h \propto p v_h
\]
Given:
\[
I_e:I_h=0.75:0.25=3:1
\]
Also,
\[
v_e=\frac{3}{2}v_h
\]
So,
\[
\frac{n v_e}{p v_h}=3
\]
\[
\frac{n}{p}\cdot \frac{3}{2}=3
\]
\[
\frac{n}{p}=2
\]
So the direct calculation gives:
\[
\boxed{2:1}
\]
which corresponds to option (E), not (D).