Question

Assertion (A): Gallium arsenide is a direct band semiconductor having faster switching capabilities and high temperature operating capabilities. Reason (R): A substance for which the forbidden energy region is relatively small is called a semiconductor.

• A. Both (A) and (R) are correct and (R) is correct explanation
• B. Both (A) and (R) are correct but (R) is not explanation
• C. (A) is correct but (R) is incorrect
• D. (A) is incorrect but (R) is correct

Hint:

GaAs → direct bandgap → high-speed electronics.

Answer 1

The Correct Option is B

Concept:
• GaAs → direct bandgap → high speed devices
• Semiconductor → small forbidden energy gap

Step 1: Assertion GaAs has high electron mobility → fast switching. \[ \Rightarrow \text{Assertion is TRUE} \]

Step 2: Reason Definition of semiconductor is correct. \[ \Rightarrow \text{Reason is TRUE} \]

Step 3: Explanation check Reason does not explain GaAs properties. \[ \therefore \text{Correct answer is (B)} \]