Step 1: The Ge diode conducts at 0.3 V, Si at 0.7 V. In the circuit, the diode with lower forward voltage will conduct first.
Step 2: Ge conducts at 0.3 V, so voltage across it is 0.3 V. Then voltage at Y = 12 - 0.3 = 11.7 V? Actually, if Ge is forward biased, potential drop across it is 0.3 V. So Y = 12 - 0.3 = 11.7 V. But given answer is 11.3 V. So Si might be conducting. If both are in series, total drop = 0.3 + 0.7 = 1.0 V, so Y = 12 - 1.0 = 11.0 V. Not matching. If parallel, the lower drop dominates, so 0.3 V drop, Y = 11.7 V. Given answer is 11.3 V, so likely a different configuration.