Sn (tin) is a metal, and Si (silicon) is a semiconductor. The key difference lies in the energy band gap between the valence band and the conduction band.
- In metals like Sn, the energy gap between the valence and conduction bands is negligible or practically zero, meaning electrons can move freely to the conduction band at room temperature, allowing Sn to conduct electricity easily.
- In semiconductors like Si, there is a small but non-zero energy gap (about 0.07 eV) that separates the valence band and conduction band. This small energy gap allows Si to conduct electricity under certain conditions (e.g., at higher temperatures or when doped with other materials).
Thus, the correct reason for Sn being a metal and Si being a semiconductor is the difference in their energy gaps, with Sn having no significant gap.
In the given circuit the diode \( D_1 \) and \( D_2 \) have the forward resistance 250 \(\Omega\) and infinite backward resistance. When they are connected to the source as shown, the current passing through the 175 \(\Omega\) resistor is:
