In a semiconductor, conductivity is given by: \[ \sigma = n e \tau \] Where: - \( n \) is the number density of free charge carriers, - \( e \) is the charge of the electron, - \( \tau \) is the relaxation time. As the temperature increases, the number density of free carriers \( n \) increases due to the increased excitation of electrons from the valence band to the conduction band.
However, the relaxation time \( \tau \) typically decreases as temperature increases because higher temperatures cause more collisions of charge carriers, leading to more scattering. The net effect is that the increase in number density dominates, causing an overall increase in conductivity.
Thus, the correct answer is that the relaxation time increases with temperature, but the increase in number density is the primary reason for the increase in conductivity.
In the given circuit the diode \( D_1 \) and \( D_2 \) have the forward resistance 250 \(\Omega\) and infinite backward resistance. When they are connected to the source as shown, the current passing through the 175 \(\Omega\) resistor is:
