In the circuit below, assume that the long channel NMOS transistor is biased in saturation. The small signal transconductance of the transistor is \(g_m\). Neglect body effect, channel length modulation, and intrinsic device capacitances. The small signal input impedance \(Z_{in}(j\omega)\) is:
For non-degenerately doped n-type silicon, which one of the following plots represents the temperature (\(T\)) dependence of free electron concentration (\(n\))?
In the circuit shown, the \(n:1\) step-down transformer and the diodes are ideal. The diodes have no voltage drop in forward-biased condition. If the input voltage (in Volts) is \(V_s(t) = 10\sin\omega t\) and the average value of load voltage \(V_L(t)\) (in Volts) is \(2.5/\pi\), the value of \(n\) is \(\_\_\_\_\).
Consider a unity negative feedback control system with forward path gain: \[ G(s) = \frac{K}{(s+1)(s+2)(s+3)}. \] The impulse response of the closed-loop system decays faster than \(e^{-t}\) if \(\_\_\_\_\).
A satellite attitude control system, as shown below, has a plant with transfer function: $ G(s) = \frac{1}{s^2}, $ cascaded with a compensator: $ C(s) = \frac{K(s + \alpha)}{s + 4}, $ where $ K $ and $ \alpha $ are positive real constants. In order for the closed-loop system to have poles at $ -1 \pm j\sqrt{3} $, the value of $ \alpha $ must be $\_\_\_\_\_$.
The propagation delay of the \(2 \times 1\) MUX shown in the circuit is \(10 \, {ns}\). Consider the propagation delay of the inverter as \(0 \, {ns}\). If \(S\) is set to 1, then the output \(Y\) is \(\_\_\_\_\).
The sequence of states (\(Q_1 Q_0\)) of the given synchronous sequential circuit is \(\_\_\_\_\).
Consider two continuous-time signals \(x(t)\) and \(y(t)\) as shown below. If \(X(f)\) denotes the Fourier transform of \(x(t)\), then the Fourier transform of \(y(t)\) is \(\_\_\_\_\).