Step 1: Doping:
An n-type semiconductor is made by adding a pentavalent impurity (such as phosphorus or arsenic) to silicon or germanium. Each impurity atom has five valence electrons, of which four form bonds and one is left free.
Step 2: Carriers:
The free electrons are the majority carriers. Holes are the minority carriers.
Step 3: Check the Statements:
(A) Says holes are majority carriers, which describes p-type material, so it does not match.
(B) Trivalent impurity with electrons minority: this describes p-type material.
(C) Pentavalent impurity, electrons majority: this describes n-type material.
(D) Trivalent impurity with holes majority: this describes p-type material.
Step 4: Match the Choice:
Statement (C) is the correct one. In the answer list, the option that gives statement (C) is option B.
Final Answer:
Statement (C) is correct, which is option B.
\[ \boxed{\text{(B) statement (C)}} \]