Question:
Application of a forward bias to a $p-n$ junction
Application of a forward bias to a $p-n$ junction
Updated On: Jul 2, 2022
- increases the number of donors on the n-side
- increases the electric field in the depletion zone
- increases the potential difference across the depletion zone
- widens the depletion zone
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The Correct Option is A
Solution and Explanation
When $p$-side of junction diode is connected to positive of battery and $n$-side to the negative, then junction diode is forward biased.
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Concepts Used:
P-n Junction
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
Biasing conditions for the p-n Junction Diode:
in p-n junction diode two operating regions are there:
- P-type
- N-type
There are three biasing conditions for p-n junction diode are as follows:
- Zero bias: When there is no external voltage applied to the p-n junction diode.
- Forward bias: P-type is connected to positive terminal of the voltage potential while n-type is connected to the negative terminal.
- Reverse bias: P-type is connected to negative terminal of the voltage potential while n-type is connected to the positive terminal.