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CUET (PG) 2025
List of top Questions asked in CUET (PG)- 2025
(A) Tunnel diode is a heavily doped pn junction diode that exhibits negative differential resistance.
(B) Stability factor (S) is the maximum for a voltage divider bias circuit.
(C) The operational amplifier works as a comparator circuit in open loop configuration.
(D) Biasing is done to set the quiescent point of the transistor in the middle of the DC load line.
Choose the correct statements from the options given below:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
Arrange the following devices in increasing order of their input resistances:
(A) MOSFET
(B) BJT
(C) JFET
(D) PN junction diode
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
Match List-I with List-II:
List-I (Effects)
List-II (Electronic Devices)
(A) Channel length modulation
(I) Zener diode
(B) Channel width modulation
(II) BJTs
(C) Early effect
(III) JFETs
(D) Tunneling effect
(IV) MOSFETs
Choose the correct answer:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
Following statements are given in reference to 8085 Microprocessor:
(A) Its memory size is 64 KB
(B) It is a 40-pin IC
(C) Its clock frequency lies between 3 to 5 MHz
(D) It has 16 bit of each data and address lines.
Choose the correct answer from the options given below:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
Match List-I with List-II
List-I (Instructions)
List-II (Addressing Mode)
(A) LDA 2100 H
(I) Immediate
(B) RAL
(II) Register
(C) ADD C
(III) Direct
(D) ANI 08 H
(IV) Implied
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
(A) MOV A, C is a one-byte instruction.
(B) OUT 03 H is a two-byte instruction.
(C) ANI 76 H is a three-byte instruction.
(D) STA 3000 H is a three-byte instruction.
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
Match List-I with List-II
List-I (Data Bus Status Output)
List-II (Status Signals)
(A) Memory read
(I) 0, 1, 1
(B) Op-code fetch
(II) 0, 1, 0
(C) INTR acknowledge
(III) 0, 0, 1
(D) Memory write
(IV) 1, 1, 1
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
............ refers to the inability to faithfully repeat recorded data output when measuring a range of values and scanning from different directions.
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
........ is the vector address of the TRAP interrupt.
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
What is the word length of an 8-bit microprocessor?
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Electronic devices
Consider the following statements:
(A) Built-in potential across a diode reduces with increase in temperature.
(B) Electron concentration of n-type semiconductor equals intrinsic concentration at Curie temperature.
(C) Drain current of MOSFET is a positive temperature coefficient (PTC).
(D) Collector current of BJT has a PTC.
Choose the correct statements:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
Match List-I with List-II:
List-I (Electric field)
List-II (Mobility)
(A) Low electric field
(I) Mobility decreases by \( \frac{1}{E} \)
(B) Medium electric field
(II) Mobility decreases by \( \frac{1}{\sqrt{E}} \)
(C) High electric field
(III) Mobility remains constant
Choose the correct answer:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
The unit of ratio of diffusion constant (D) and mobility (\(\mu\)) is:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
A silicon crystal is doped with a group III element, the electron concentration falls below intrinsic concentration by a factor of \(10^6\), so the concentration of impurity present is:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
Choose the wrong option from the following for the given statement. Statement: Electric field is conservative.
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
Choose the correct answer from the options given below.
A. \( \vec{\nabla} \times \vec{B} = \mu_0 \vec{J} \) represents Ampere's circuital law.
B. \( \vec{\nabla} \cdot \vec{B} = 0 \) represents magnetic monopole doesn't exist experimentally.
C. \( \vec{\nabla} \times \vec{E} = 0 \) represents the conservative nature of the electric field.
D. \( \vec{\nabla} \times \vec{A} = 0 \) represents the solenoidal condition for a vector field.
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
Match List-I with List-II
List-I
List-II
(A) Faraday’s Law
(ii) \( \vec{\nabla} \times \vec{E} = -\frac{\partial \vec{B}}{\partial t} \)
(B) Conservation Law
(iii) \( \vec{\nabla} \times \vec{A} = 0 \)
(C) Ohm’s Law
(iv) \( \vec{J} = \sigma \vec{E} \)
(D) Gauss’s Law
(i) \( \frac{\rho}{\epsilon_0} \)
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
Gauss's law in magnetostatics is expressed as,
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
If in a free space, the electric field is given as: \[ \vec{E} = 20 \cos(\omega t - 50x) \hat{y} \, \text{V/m} \] then, the expression of displacement current density \( J_d \) is:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
Which of the following statements about hydrogen peroxide is INCORRECT?
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
In X-ray diffraction, a collimated beam of X-rays, with most appropriate wavelength ranging from .......... is incident on a specimen and is diffracted by the crystalline phases of the specimen:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
........... are electromagnetic radiation with typical photon energies in the range of 100 eV to 100 keV:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
Measurement of grain size by using X-ray diffraction line broadening can be done by:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Solid State Physics, Devices, Electronics
Express \(v_{\text{out}}\) in terms of \(v_{\text{in}}\) for the given circuit, assuming the op-amp is ideal.
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Op-Amps
Considering the op-amp to be ideal, the \(v_{\text{out}}\) is expressed as:
CUET (PG) - 2025
CUET (PG)
Nanoelectronics
Op-Amps
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