The electric current produced when the charge carrier concentration moves from region of higher concentration to the region of lower concentration is called
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Drift current: \(\vec{J}_{drift} = q(n\mu_n + p\mu_p)\vec{E}\).
Diffusion current: \(\vec{J}_{diff} = qD_n \nabla n - qD_p \nabla p\) (for electrons and holes respectively, signs depend on gradient direction).
Current in semiconductors arises from two main mechanisms:
Drift current: Due to the motion of charge carriers under the influence of an electric field.
Diffusion current: Due to the motion of charge carriers from a region of high concentration to a region of low concentration, driven by the concentration gradient.
The question describes current due to movement from higher to lower concentration, which is diffusion current.
Reverse saturation current is a small current in a reverse-biased diode. Breakdown current is a large current during diode breakdown.
\[ \boxed{\text{Diffusion current}} \]
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