Question:

In the saturation region of a MOSFET, the drain current is primarily controlled by

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In the saturation region, \[ \boxed{ I_D\propto(V_{GS}-V_T)^2 } \] and is almost independent of \(V_{DS}\).
Updated On: Jul 14, 2026
  • \(V_{DS}\)
  • \(V_{GS}\)
  • Drain resistance
  • Temperature only
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The Correct Option is B

Solution and Explanation

Step 1: Recall the MOSFET saturation condition. For an enhancement MOSFET operating in saturation, \[ V_{DS}\ge V_{GS}-V_T. \]

Step 2:
Identify the controlling quantity. The drain current is approximately \[ I_D = \frac{k}{2}(V_{GS}-V_T)^2, \] showing that it mainly depends on the gate-to-source voltage. Hence, \[ \boxed{V_{GS}} \] controls the drain current. Therefore, \[ \boxed{(B)} \] is the correct answer.
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