Step 1: Recall the MOSFET saturation condition.
For an enhancement MOSFET operating in saturation,
\[
V_{DS}\ge V_{GS}-V_T.
\]
Step 2: Identify the controlling quantity.
The drain current is approximately
\[
I_D
=
\frac{k}{2}(V_{GS}-V_T)^2,
\]
showing that it mainly depends on the gate-to-source voltage.
Hence,
\[
\boxed{V_{GS}}
\]
controls the drain current.
Therefore,
\[
\boxed{(B)}
\]
is the correct answer.