Question:
In PN junction, if P side is highly doped and N side is lightly doped, then
In PN junction, if P side is highly doped and N side is lightly doped, then
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Depletion region width is inversely proportional to doping concentration:
\[
W \propto \frac{1}{\text{doping}}
\]
Lightly doped side always has wider depletion region.
Updated On: Apr 7, 2026
- depletion layer has more region in P side
- depletion layer has more region in N side
- depletion layer has equal region in both side
- there will be no depletion layer
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The Correct Option is B
Solution and Explanation
Concept:
The depletion region extends more into the lightly doped side because fewer charge carriers are available there.
Step 1: Analyze doping levels. • P-side: highly doped • N-side: lightly doped
Step 2: Determine depletion region distribution. Depletion region is wider where carrier concentration is lower. Thus, it extends more into the N-side. \[ \boxed{\text{Depletion layer is more in N-side}} \]
Step 1: Analyze doping levels. • P-side: highly doped • N-side: lightly doped
Step 2: Determine depletion region distribution. Depletion region is wider where carrier concentration is lower. Thus, it extends more into the N-side. \[ \boxed{\text{Depletion layer is more in N-side}} \]
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