List of top Questions asked in GATE EC- 2023

In the circuit shown below, $D_1$ and $D_2$ are silicon diodes with cut-in voltage of 0.7 V. $V_{IN}$ and $V_{OUT}$ are input and output voltages in volts. The transfer characteristic is _____________

In the circuit shown below, switch S was closed for a long time. If the switch is opened at $t=0$, the maximum magnitude of the voltage $V_R$, in volts, is _____________ (rounded off to the nearest integer). 

For the circuit shown below, the propagation delay of each NAND gate is 1 ns. The critical path delay, in ns, is ___________ (rounded off to the nearest integer). 

For the two port network shown below, the [Y]-parameters is given as [Y] = (1/100) * [[2 -1], [-1 4/3]] S. The value of load impedance Z_L, in ohms, for maximum power transfer will be _____________ (rounded off to the nearest integer).

In the circuit shown below, the current $i$ flowing through $200\,\Omega$ resistor is ________ mA (rounded off to two decimal places).

For a MOS capacitor, $V_{fb}$ and $V_t$ are the flat-band voltage and the threshold voltage, respectively. The variation of the depletion width ($W_{\text{dep}}$) for varying gate voltage ($V_g$) is best represented by

A transparent dielectric coating is applied to glass $(\varepsilon_r=4,\ \mu_r=1)$ to eliminate the reflection of red light $(\lambda_0=0.75~\mu\text{m})$. The minimum thickness of the dielectric coating, in $\mu$m, that can be used is __________ (rounded off to two decimal places).}
The signal-to-noise ratio (SNR) of an ADC with a full-scale sinusoidal input is given to be 61.96 dB. The resolution of the ADC is ______ bits (rounded off to the nearest integer).