The energy band diagram of a p-type semiconductor bar of length \( L \) under equilibrium condition (i.e., the Fermi energy level \( E_F \) is constant) is shown in the figure. The valance band \( E_V \) is sloped since doping is non-uniform along the bar. The difference between the energy levels of the valence band at the two edges of the bar is \( \Delta \). 
If the charge of an electron is \( q \), then the magnitude of the electric field developed inside this semiconductor bar is
For a MOS capacitor, $V_{fb}$ and $V_t$ are the flat-band voltage and the threshold voltage, respectively. The variation of the depletion width ($W_{\text{dep}}$) for varying gate voltage ($V_g$) is best represented by
For a MOS capacitor, $V_{fb}$ and $V_t$ are the flat-band voltage and the threshold voltage, respectively. The variation of the depletion width ($W_{\text{dep}}$) for varying gate voltage ($V_g$) is best represented by
In an extrinsic semiconductor, the hole concentration is given to be $1.5n_i$ where $n_i$ is the intrinsic carrier concentration of $1 \times 10^{10}$ \(\text{cm}^{-3}\). The ratio of electron to hole mobility for equal hole and electron drift current is given as _____________ (rounded off to two decimal places).
“I cannot support this proposal. My ___________ will not permit it.”
Courts : _________ :: Parliament : Legislature ; (By word meaning)
What is the smallest number with distinct digits whose digits add up to 45? 