When silicon (Si), which has 4 valence electrons, is doped with gallium (Ga), which has 3 valence electrons, it creates a p-type semiconductor. This occurs because gallium has one fewer valence electron than silicon, creating a "hole" in the crystal structure where an electron is absent. This hole acts as a positive charge carrier, making the material a p-type semiconductor. Thus, silicon doped with gallium forms a p-type semiconductor, which corresponds to option (A).
The correct option is(A) : P-type semiconductor
When silicon is doped with gallium, gallium (a trivalent element) replaces some of the silicon atoms in the crystal lattice. Gallium has three valence electrons, while silicon has four. When gallium is introduced into the silicon structure, it creates a "hole" (a missing electron) because there are fewer electrons in the bonding orbitals than needed for full bonding.
These "holes" act as positive charge carriers. Since the charge carriers are positive, the material formed is a p-type semiconductor (where "p" stands for positive). The majority carriers in a p-type semiconductor are holes.
Thus, silicon doped with gallium forms a p-type semiconductor.
Given below is the industrial process for the manufacture of ammonia gas. Study the schematic diagram to answer the following questions.
(a) Name the process.
(b) Which catalyst is used in the above process?
(c) In the above diagrammatic setup, how is ammonia gas separated from the unreacted gases to obtain liquid ammonia?
(d) Which two properties of ammonia gas can be demonstrated by the Fountain Experiment? 
Study the reaction scheme shown below and identify the reactants A, B and C. 
Match the following:
In the following, \( [x] \) denotes the greatest integer less than or equal to \( x \). 
Choose the correct answer from the options given below:
For x < 0:
f(x) = ex + ax
For x ≥ 0:
f(x) = b(x - 1)2