Gallium Arsenide (GaAs) is a semiconductor that exhibits negative differential resistance at higher electric fields. This unique property implies that within a specific region of its operation, an increase in voltage leads to a decrease in current.
At low voltage levels, the current increases linearly with the applied voltage. In this phase, the material obeys Ohm's law ($V = IR$) and functions like a standard conductor. This is defined as the Ohmic region.
Once the voltage exceeds a specific threshold, the current begins to drop despite a further increase in voltage. This non-linear behavior is referred to as the negative resistance region.
The relationship between Voltage ($V$) and Current ($I$) for GaAs can be visualized as follows:

The interpretation of the $V-I$ curve is divided into two main segments:
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