Gallium Arsenide (GaAs) is a semiconductor that exhibits negative differential resistance at higher electric fields. This unique property implies that within a specific region of its operation, an increase in voltage leads to a decrease in current.
At low voltage levels, the current increases linearly with the applied voltage. In this phase, the material obeys Ohm's law ($V = IR$) and functions like a standard conductor. This is defined as the Ohmic region.
Once the voltage exceeds a specific threshold, the current begins to drop despite a further increase in voltage. This non-linear behavior is referred to as the negative resistance region.
The relationship between Voltage ($V$) and Current ($I$) for GaAs can be visualized as follows:

The interpretation of the $V-I$ curve is divided into two main segments:
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 