| LIST I | LIST II | ||
|---|---|---|---|
| A. | Intrinsic semiconductor | I. Used as a rectifier circuit | |
| B. | N-Type Semiconductor | II. Pure form of Semiconductor | |
| C. | P-Type Semiconductor | III. Doping of pentavalent impurity in semiconductor | |
| D. | P-N Junction diode | IV. Doping of trivalent impurity in semiconductor |
- Intrinsic semiconductors are pure and do not have any doping (A - II).
- N-type semiconductors are created by doping with pentavalent impurities (B - III).
- P-type semiconductors are created by doping with trivalent impurities (C - IV).
- A P-N junction diode is created by combining P-type and N-type semiconductors (D - I).
| List I | List II |
|---|---|
| (A) The linear momentum of the system remains constant | (IV) The net external force acting on a system of particles is zero |
| (B) The angular momentum of the system remains constant | (III) The external torque acting on a system of particles is zero |
| (C) Inertial frame | (I) The frames relative to which an unaccelerated body appears unaccelerated |
| (D) Non-inertial frame | (II) The frames relative to which an unaccelerated body appears accelerated |
| LIST I | LIST II |
|---|---|
| A. Maxwell's First Equation | I. Modified Ampere's Law |
| B. Maxwell's Second Equation | II. Faraday's Laws of Electromagnetic Induction |
| C. Maxwell's Third Equation | III. Gauss Law in Electrostatics |
| D. Maxwell's Fourth Equation | IV. Gauss Law in Magnetostatics |
| List I | List II |
|---|---|
| (A) (∂S/∂P)T | (I) (∂P/∂T)V |
| (B) (∂T/∂V)S | (II) (∂V/∂S)P |
| (C) (∂T/∂P)S | (III) -(∂V/∂T)P |
| (D) (∂S/∂V)T | (IV) -(∂P/∂S)V |
| LIST I | LIST II |
|---|---|
| A. Maxwell's First Equation | I. Modified Ampere's Law |
| B. Maxwell's Second Equation | II. Faraday's Laws of Electromagnetic Induction |
| C. Maxwell's Third Equation | III. Gauss Law in Electrostatics |
| D. Maxwell's Fourth Equation | IV. Gauss Law in Magnetostatics |