Question:
Consider phosphorus doping in silicon, for $T = 300 \, \text{K}$, at concentration $N_d = 10^{16} \, \text{cm}^{-3}$. The fraction of total electrons still in the donor states is:
Consider phosphorus doping in silicon, for $T = 300 \, \text{K}$, at concentration $N_d = 10^{16} \, \text{cm}^{-3}$. The fraction of total electrons still in the donor states is:
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Doping introduces donor or acceptor states in a semiconductor, altering the electron distribution and the fraction of electrons in these states.
Updated On: Feb 11, 2026
- 41
- 41
- 41
- 14
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The Correct Option is B
Solution and Explanation
The fraction of electrons in the donor states can be determined using the formula for the concentration of electrons in the conduction band, given the donor concentration and temperature.
For Nd = 1016 cm−3 , the fraction of electrons in donor states is approximately 41
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