Step 1: Recall what a quasi-Fermi level is.
In a p-n junction at equilibrium there is one common Fermi level, \(E_F\), on both sides. Once the diode is forward biased, the carrier populations move out of equilibrium and we need two separate levels: \(E_{fn}\) for electrons and \(E_{fp}\) for holes.
Step 2: Write the carrier concentrations using quasi-Fermi levels.
The electron and hole densities anywhere in the device can be written as
\[
n=n_i\exp\left(\frac{E_{fn}-E_i}{kT}\right),\qquad p=n_i\exp\left(\frac{E_i-E_{fp}}{kT}\right)
\]
Multiplying these two expressions,
\[
np=n_i^2\exp\left(\frac{E_{fn}-E_{fp}}{kT}\right)
\]
Step 3: Connect this product to the applied bias.
For a forward biased junction with negligible series resistance, the standard result for the junction (the law of the junction) gives, through the depletion region,
\[
np=n_i^2\exp\left(\frac{qV}{kT}\right)
\]
where \(V\) is the applied forward voltage.
Step 4: Equate the two expressions for \(np\).
Comparing the exponents,
\[
\frac{E_{fn}-E_{fp}}{kT}=\frac{qV}{kT}
\]
so
\[
E_{fn}-E_{fp}=qV
\]
The split between the two quasi-Fermi levels, measured in energy, equals the applied voltage measured in electron-volts.
Step 5: Put in the given voltage.
Here \(V=2\) V, so
\[
|E_{fn}-E_{fp}|=q(2\text{ V})=2\text{ eV}
\]
Step 6: Check the other options.
(B) 1 eV: This would need \(V=1\) V, but the diode is biased at \(2\) V, so this is wrong.
(C) 2 V: This mixes up units. The Fermi level split is an energy, so it must be expressed in eV, not V.
(D) 1 V: Wrong for the same unit reason as (C), and also has the wrong number.
Final Answer:
The magnitude of the energy split between the quasi-Fermi levels is
\[
\boxed{2\text{ eV}}
\]