Step 1: In metals, as the temperature increases, the atomic vibrations increase, which leads to more collisions between free electrons and atoms. This causes the electrical resistance (and thus conductivity) to decrease with increasing temperature.
Step 2: In semiconductors, the conductivity increases with temperature as more charge carriers are thermally excited.
Step 3: Silicon is an indirect band gap semiconductor, and Gallium Arsenide (GaAs) is a direct band gap semiconductor. Thus, options (A), (C), and (D) are incorrect.
Thus, the correct answer is (B).
Choose the graph that best describes the variation of dielectric constant (\( \epsilon_r \)) with temperature (\( T \)) in a ferroelectric material.
(T\(_C\) is the Curie temperature) 
As shown in the figure, X-ray diffraction pattern is obtained from a diatomic chain of atoms P and Q. The diffraction condition is given by \( a \cos \theta = n\lambda \), where \( n \) is the order of the diffraction peak. Here, \( a \) is the lattice constant and \( \lambda \) is the wavelength of the X-rays. Assume that atomic form factors and resolution of the instrument do not depend on \( \theta \). Then, the intensity of the diffraction peaks is 
A two-dimensional square lattice has lattice constant \(a\). \(k\) represents the wavevector in reciprocal space. The coordinates \((k_x, k_y)\) of reciprocal space where band gap(s) can occur, are
The free energy of a ferromagnet is given by \[ F = F_0 + a_0 (T - T_C) M^2 + b M^4, \] where \(F_0\), \(a_0\), and \(b\) are positive constants, \(M\) is the magnetization, \(T\) is the temperature, and \(T_C\) is the Curie temperature. The relation between \(M^2\) and \(T\) is best depicted by

As shown in the figure, inverse magnetic susceptibility \( \frac{1}{\chi} \) is plotted as a function of temperature (T) for three different materials in paramagnetic states. 
(Curie temperature of ferromagnetic material = \( T_C \), Néel temperature of antiferromagnetic material = \( T_N \))
Choose the correct statement from the following